Zarolho
Power Member
From the Intel’s desktop roadmap, we know Bearlake which supporting DDR3 is going to be released in Q207. On a mean while, the company estimates that DDR3 would become main technology in 2009.
Charles Chang, Intel’s supplier Manager, said during IDF Fall 06 that the company has received DDR3 samples from different manufacturers, and they are working fine in Intel platform. DDR3 is scheduled in mass production in Q107 and available in the market in a quarter later in Q207.
DDR3 has a better Bandwitdh per watt. Comparing to DDR2-800, DDR3-800/1067/1333 use only 72%, 83%, and 95% of power. DDR3 is more power saving at the same time it enhanced the bandwidth. However, Chalres Chang said the company estimates that DDR3 would become main technology in 2009 only. According to a report concerning DDR3 Volume & Pricing Forecast relative to DDR2 from iSuppli, DDR3 would only share 10% of the market in 2007 where its price is 50%higher than DDR2. In 2008, it’s better. DDR3 would rise to 25% of the market share and its price would drop to a similar price of DDR2. Finally, DDR3 is expected to be the main technology in 2009.
Regarding with the CAS Latency, Kim Gyou Joong, Senior Engineer, Samsung Electronics Corporation, said all of the DDR2-533 (CL 4-4-4), DDR2-667 (CL 5-5-5) and DDR2-800 (CL6-6-6) have 15ns latency according to JEDEC. CAS Latency (CL) is the time (in number of clock cycles) that elapses after the memory controller sends a request to read a memory location and before the data is sent to the module's output pins. As CAS Latency only specifies the delay between the request and the first bit, the clock speed specifies the latency between bits. Thus, when reading bursts of data, a higher clock speed can be faster in practice, even with a worse CAS Latency.
Taking DDR3-1066 (7-7-7), DDR3-1333 (8-8-8), and DDR3-1600 (9-9-9) as examples, we need to count the clock speed in order to calculate the CAS Latency, and the results are 13.125ns, 12ns, and 11.25ns. They get 25% faster. So we should bear in mind that CAS Latency is not related to CL only, but also the clock speed.
According to Samsung’s schedule, Samsung DDR3-800/1066 will be available in the market in Q207, and DDR3-1666 is a quarter later in Q307. DDR3 for mobile platform will be introduced in Q108 with DDR3- 800/1066, and DDR3-1333 will be released in Q109.
Figure 4 below is a working platform of DDR3 with Bearlake-P chipset
(ver link, fotos)
http://www.hkepc.com/bbs/itnews.php?tid=687974&starttime=0&endtime=0
Charles Chang, Intel’s supplier Manager, said during IDF Fall 06 that the company has received DDR3 samples from different manufacturers, and they are working fine in Intel platform. DDR3 is scheduled in mass production in Q107 and available in the market in a quarter later in Q207.
DDR3 has a better Bandwitdh per watt. Comparing to DDR2-800, DDR3-800/1067/1333 use only 72%, 83%, and 95% of power. DDR3 is more power saving at the same time it enhanced the bandwidth. However, Chalres Chang said the company estimates that DDR3 would become main technology in 2009 only. According to a report concerning DDR3 Volume & Pricing Forecast relative to DDR2 from iSuppli, DDR3 would only share 10% of the market in 2007 where its price is 50%higher than DDR2. In 2008, it’s better. DDR3 would rise to 25% of the market share and its price would drop to a similar price of DDR2. Finally, DDR3 is expected to be the main technology in 2009.
Regarding with the CAS Latency, Kim Gyou Joong, Senior Engineer, Samsung Electronics Corporation, said all of the DDR2-533 (CL 4-4-4), DDR2-667 (CL 5-5-5) and DDR2-800 (CL6-6-6) have 15ns latency according to JEDEC. CAS Latency (CL) is the time (in number of clock cycles) that elapses after the memory controller sends a request to read a memory location and before the data is sent to the module's output pins. As CAS Latency only specifies the delay between the request and the first bit, the clock speed specifies the latency between bits. Thus, when reading bursts of data, a higher clock speed can be faster in practice, even with a worse CAS Latency.
Taking DDR3-1066 (7-7-7), DDR3-1333 (8-8-8), and DDR3-1600 (9-9-9) as examples, we need to count the clock speed in order to calculate the CAS Latency, and the results are 13.125ns, 12ns, and 11.25ns. They get 25% faster. So we should bear in mind that CAS Latency is not related to CL only, but also the clock speed.
According to Samsung’s schedule, Samsung DDR3-800/1066 will be available in the market in Q207, and DDR3-1666 is a quarter later in Q307. DDR3 for mobile platform will be introduced in Q108 with DDR3- 800/1066, and DDR3-1333 will be released in Q109.
Figure 4 below is a working platform of DDR3 with Bearlake-P chipset
(ver link, fotos)
http://www.hkepc.com/bbs/itnews.php?tid=687974&starttime=0&endtime=0
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