Drive Thread oficial de novidades e lançamentos SSD

Anunciado o Toshiba OCZ TR200. Será o primeiro SSD da Toshiba com 64-Layer 3-bit-per-cell TLC BiCS FLASH de venda direta ao público sem ser apenas de venda OEM.

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Capacidade: 240GB - 960GB
Leitura / Escrita sequencial: até 550 MB/s / até 525MB/s
Garantia 3 anos.

O preço não foi anunciado e estará disponível no Outono.

Toshiba Introduces TR200 SATA Retail SSD Series with 64-Layer 3D Flash Memory

The all-new Toshiba TR200 Series Delivers Next Generation Upgrade for Mobile or Desktop Systems

Düsseldorf, Germany, 27 July 2017 - Toshiba Electronics Europe GmbH launched today the TR200 SATA solid state drive (SSD) series for the retail market. Leveraging Toshiba’s latest 3-bit-per-cell TLC (triple-level cell) BiCS FLASH the TR200 series offers PC gamers and DIY enthusiasts Toshiba’s first upgrade SSD with 64-layer 3D flash memory.
Toshiba TR200 SSDs offer an easy and affordable way to enhance notebook or desktop experiences by increasing system responsiveness and productivity over traditional hard disk drives (HDDs). With a 6 Gbit/s SATA interface, the TR200 series is rated for sequential read/write speeds[1] of up to 550 MB/s and 525 MB/s[2] and random read/write performances[3] of up to 80,000 and 87,000 input/output operations per second (IOPS)[4]. In addition to the excellent SATA performance, TR200 SSDs provide low power consumption that translates into a longer battery life for on-the-go users.
The TR200 series will be showcased at the China Digital Entertainment Expo and Conference (ChinaJoy) in Shanghai, China from July 27-30 and Gamescom in Cologne, Germany from August 22-26 (Hall 10.1/B024). TR200 drives will be offered in a 2.5-inch form factor and are available in 240GB, 480GB, and 960GB capacities[5] and will be available at retailers and etailers this autumn.
 
Última edição:
DRAM, NAND flash memory markets drive the first annual double-digit upturn since 2010.
Entering the second half of the year, it is clear the IC industry is on course for a much stronger upturn than was initially forecast in January. IC Insights now expects the IC market to increase 16% in 2017 due to exceptional growth in the DRAM and NAND flash memory markets. The DRAM market is now forecast to grow 55% and the NAND flash market is now expected to rise 35% this year—in both cases, almost entirely due to fast-rising prices rather than unit growth.
http://www.icinsights.com/news/bulletins/Significant-MidYear-Revision-To-2017-IC-Market-Forecast/

O que em boa parte ajuda a explicar isto

170728_ICinsights_marketshare_1000_1501262801.jpg

http://eetimes.com/document.asp?doc_id=1332079
 
TBS012_LRES.jpg


Novo lançamento da Toshiba com o foco em baixo consumo. TLC BiCS Flash.

Düsseldorf, Germany, 03 August 2017 - Toshiba Electronics Europe GmbH today announced the availability of the state-of-the-art BG3 series, its next generation single-package ball grid array (BGA) solid state drive (SSD) product line based on Toshiba’s latest 64 layer, 3-bit-per-cell TLC (triple-level cell) BiCS FLASH. Designed to fuel the future of mobile devices, Toshiba’s BG3 SSDs deliver better performance[2] and a smaller footprint than traditional SATA-based drives. Moreover, with its cost-effective DRAM-less design, the unique BG3 series enables a high quality user experience at a fraction of the power requirement of other NVM Express[3] (NVMe) SSDs[4].

Toshiba’s BG3 series leverages the Host Memory Buffer (HMB) feature in NVMe Revision 1.2.1 to maintain high performance without integrated DRAM by using host memory for flash management purposes. This powerful combination allows devices to harness the performance of NVMe storage while maximizing footprint and affordability to deliver a next-generation mobile experience to end users. Both fast and economical, these miniaturized SSDs also offer data center and enterprise applications an alternative solution for server boot storage.

With style and portability top of mind for today’s laptop and tablet manufacturers, the BG3 series was designed specifically to enable even slimmer and more power efficient devices. By eliminating DRAM from its design, Toshiba’s BG3 series offers the world’s thinnest SSDs[5] available at just 1.3mm high and delivers lower power consumption to maximize battery life.

Toshiba BG3 SSDs are small in size but not performance. Featuring a PCI Express (PCIe)[6] Gen3 x2 lane and NVMe Revision 1.2.1 architecture, BG3 delivers to up to 1520 MB/s sequential read, 2.7 times the theoretical maximum bandwidth of SATA 6Gbit/s and up to 840 MB/s sequential write[7], 1.5 times the theoretical maximum bandwidth of SATA 6Gbit/s. Additionally, BG3 also features SLC cache for excellent performance to accelerate burst type workloads, such as those routinely experienced on Windows[8] -based PCs.

The ultra-compact BG3 series is available in 128GB, 256GB, and 512GB capacities[9]. All three models are available in a surface-mount BGA (M.2 1620) or a removable module (M.2 2230) form factor for platform design flexibility.

"Toshiba’s third generation BG SSDs are ideal for mobile and IoT computing and datacenter use alike", says Paul Rowan, General Manager at Toshiba Electronics Europe, SSD Business Unit. "Especially in datacenters the deployment of BG3 can greatly reduce both capital and operation expenses as the new BG3 series bridges the power and price gap between enterprise SATA and mainstream client NVMe SSDs while still providing boot storage with improved power consumption and compact footprint", he concludes.

BG3’s single-package design features a Toshiba-developed controller and firmware, tightly integrated with Toshiba Flash memory and is optimized for performance, low power, and reliability. To address modern security needs, self-encrypting drive options (SED) with TCG[10] Opal Version 2.01 are available.

The BG3 series is sampling to customers and will be demonstrated at the Flash Memory Summit 2017 in Santa Clara, CA, USA, from August 8 to 10 in booth #407.

Notes:
[1] NVMe is a trademark of NVM Express, Inc.
[2] Faster sequential read/write transfer speeds
[3] NVM Express and the NVM Express logo are registered trademarks.
[4] Compared to M.2 2280 SSDs and M.2 1620/2230 SSDs containing DRAM
[5] 128GB and 256GB BGA models; Toshiba Memory Corporation survey, as of August 3, 2017
[6] PCI EXPRESS and PCIe are registered trademarks of PCI-SIG.
[7] Toshiba Memory Corporation survey based on sequential read and write speeds of 128KiB units, using 512GB models in the BG3 series under Toshiba Memory Corporation test conditions. Read and write speed may vary, depending on the host device, read and write conditions, and file size. Toshiba Memory Corporation defines a megabyte (MB) as 1,000,000 bytes and a kibibyte (KiB) as 210 bytes, or 1,024 bytes. The sequential read and write performance mentioned herein are reference data, and may vary with the BG3 product data in the datasheet.
[8] Windows is a registered trademark of Microsoft Corporation in the United States and/or other countries.
[9] Definition of capacity: Toshiba Memory Corporation defines a gigabyte (GB) as 1,000,000,000 bytes. A computer operating system, however, reports storage capacity using powers of 2 for the definition of 1GB = 230 bytes = 1,073,741,824 bytes, and therefore shows less storage capacity. Available storage capacity (including examples of various media files) will vary based on file size, formatting, settings, software and operating system, such as Microsoft Operating System and/or pre-installed software applications, or media content. Actual formatted capacity may vary.
[10] Trusted Computing Group


* Company names, product names, and service names mentioned herein may be trademarks of their respective companies.
 
Lei da oferta e da procura, como diz o SideWalker, a procura é superior à oferta logo é normal que o preço suba.
A única forma de dar a volta a isto é se a procura diminuir, pouco provável, ou aumentar a capacidade de produção, o que demora à volta de 3 anos.
Assim de repente só o investimento do "fundo chinês" em conjunto com a Tsinghua Unigroup com novas foundries de DRAM e NAND podem aliviar, devem começar a produzir no inicio do próximo ano se tudo correr como previsto, mas estes apenas irão competir no mercado de entrada.
 
Está a ser um mês de Agosto animado para os lados da Toshiba.

PM5andCM5.jpg


Toshiba Memory Corporation Introduces World’s First[1] Enterprise-Class SSDs with 64-Layer 3D Flash Memory

Toshiba Memory Corporation (TMC) now sampling industry’s fastest[2] SAS and enterprise NVMe TLC-based solid state drives

Düsseldorf, Germany, 07 August 2017 - Toshiba Electronics Europe GmbH today announced the development of two new flagship enterprise solid state drive (SSD) solutions, the TMC PM5 12Gbit/s SAS series and the CM5 NVM Express (NVMe)[3] series. Development is expected to be completed in the fourth quarter. Both product lines are built with TMC’s latest 64 layer, 3-bit-per-cell enterprise-class TLC (triple-level cell) BiCS FLASH[4], making it possible for today’s demanding storage environments to expand the use of flash with cost-optimized 3D flash memory. With all-new, advanced features, the innovative PM5 and CM5 series raise the bar in performance capabilities and create new opportunities for businesses to leverage the power of flash storage.

Offering up to 30.72TB[5] in a 2.5-inch form factor, the TMC PM5 series introduces a full range of endurance and capacity SAS SSDs enabling data centers to effectively address big data demands while streamlining storage deployments. With the industry’s first MultiLink SAS[6] architecture, the PM5 series is able to deliver the fastest performance the market[2] has seen from a SAS-based SSD with up to 3,350 MB/s of sequential read and 2,720 MB/s of sequential write[7] in MultiLink mode and up to 400,000 random read IOPS[8] in narrow or MultiLink mode. The PM5 series’ 4-port MultiLink design is an additional technology to achieve high performance, close to PCI EXPRESS (PCIe )[9] SSDs, enabling legacy infrastructures to increase productivity without having to be re-architected from the ground up. Furthermore, PM5 SSDs support multi-stream write technology, a feature that intelligently manages and groups data types to minimize write amplification and minimize garbage collection, translating into reduced latency, improved endurance, increased performance and Quality of Service (QoS).

As TMC’s next generation NVMe SSD, the dual-port PCIe Gen3 x4 CM5 is a full-featured enterprise SSD. Like the PM5, it also supports multi-stream write technology. It is NVMe over Fabric-ready with scatter-gather list (SGL) and controller memory buffer (CMB) features. The CMB feature uses a part of DRAM on the SSD as host-system memory, reducing DRAM used load of host-side and it enables high speed as a system. Utilizing TMC’s BiCS FLASH 64-layer technology, the CM5 series has excellent performance with up to 800,000 random read and 240,000 random write IOPS for the 5 DWPD[10] (drive writes per day) model and up to 220,000 random write IOPS for the 3 DWPD model, both with a maximum power draw of 18W. Additionally, the CM5 is being used as a platform to demonstrate and to enable the ecosystem around the Persistent Memory Region (PMR) capability. PMR enables customers to augment system memory with DRAM on the SSD without the use of expensive non-volatile DIMMs (NV-DIMMs). This feature makes it possible for a single SSD solution to provide both high performance storage and persistent memory to meet system performance requirements, while significantly reducing costs by moving metadata operations, such as logging, journaling and application staging to the SSD.

"Toshiba is proud to present its new enterprise flash innovation along with the expansion of our enterprise SSD portfolio with the CM5 and PM5 series using 3D TLC FLASH. The new devices meet customer demands for greater storage capacities and application needs while leveraging the power of the latest flash memory technology", says Paul Rowan, General Manager at Toshiba Electronics Europe, SSD Business Unit.

PM5 12Gbit/s SAS SSDs will be available in capacities ranging from 400GB to 30.72TB with sanitize instant erase (SIE) and Trusted Computing Group (TCG). CM5 NVMe SSDs will offer capacities ranging from 800GB to 15.36TB with SIE and TCG. Both TLC-based product lines offer industry standard endurance ratings with 1, 3 and 5 DWPD options, and the PM5 has a 10 DWPD option available.

The PM5 and CM5 series is sampling to select OEM customers and will be unveiled and demonstrated at the Flash Memory Summit in Santa Clara, CA, USA, from August 8 to 10 in booth #407.

For more information on Toshiba’s line of industry-leading SSDs, please visit: https://toshiba.semicon-storage.com/eu/product/storage-products.html .
 
A Toshiba também anunciou que entretanto a Toshiba Memory Corp (agora autónoma) vai retomar o investimento na Fab 6

Toshiba Cuts WD Out of New Fab Investment
Toshiba said Thursday (Aug. 3) that its recently formed memory chip subsidiary, Toshiba Memory Corp., negotiated with WD's SanDisk subsidiary on joint investment for equipment in the fab, but that the two sides failed to reach an agreement. Toshiba said it will spend about 195 billion yen ($1.76 billion) to move forward unilaterally with buying gear for Phase 1 of the Fab 6 cleanroom and construction on Phase 2 at the Yokkaichi site.

Fab 6 will initially produce Toshiba's 96-layer bit-cost-scalable (BiCS) NAND flash memory, demand for which Toshiba expects to remain high through this year and 2018.
http://eetimes.com/document.asp?doc_id=1332114&

não percebi é quem é vai pagar, visto que a casa mãe não está exactamente a nadar em dinheiro. Provavelmente algum fundo de capitais japoneses (banco/estatal).
 
Mais um anúncio da Toshiba.

ToshibaSG6.jpg


64-layer, 3-bit-per-cell TLC (triple-level cell) BiCS FLASH

Next Generation Client SSD with 64-Layer 3D Flash Memory

Toshiba’s SG6 SSD is optimized for notebook PCs and desktop PC applications

Düsseldorf, Germany, 08 August 2017 - Toshiba Electronics Europe GmbH today announced the new SG6 series, the latest Toshiba client SSD to feature 64-layer, 3-bit-per-cell TLC (triple-level cell) BiCS FLASH to deliver better transfer speeds and power efficiency[1]. This family of SSDs is designed for mainstream desktops and notebooks, consumer upgrades, as well as applications needing data security.

With increased performance over the prior generation[2], SG6 features the latest SATA technology[3] to deliver up to 550 MB/s sequential read and 535 MB/s sequential write[4], and up to 100,000 and 85,000 random read/write IOPS[5] delivering enhanced application performance. Furthermore, compared to its previous generation, active power consumption was decreased by up to 40% enabling increased battery life for mobile computing.

The SG6 series comes in both M.2 2280 and 2.5-type SATA standardized form factors and includes 256GB, 512GB, and 1024GB capacities[6]. Addressing business applications requiring security, SG6 offers advanced firmware security[7] and self-encrypting drive (SED) models supporting TCG[8] Opal Version 2.01.

"The Toshiba SG6 SATA SSD series is ideal for mainstream PCs and consumer upgrades, delivering enhanced transfer speed performance and power efficiency", comments Paul Rowan, General Manager at Toshiba Electronics Europe, SSD Business Unit. "This latest SSD series shows Toshiba's commitment to provide its customers with the most suitable SSD solutions to meet market demand."

The SG6 series will be showcased at the 2017 Flash Memory Summit in Santa Clara, CA, USA, from August 8 to 10 in booth #407. Samples are currently shipping to customers with general availability later this year.

For more information on Toshiba’s line of industry-leading SSDs, please visit: https://toshiba.semicon-storage.com/eu/product/storage-products.html .
 
A ideia morre um pouco à partida pela pouca capacidade de uma solução dessas e também pouco vantajoso se o interface for rede.
 
A juntar isso está o preço por GB, ou seja a vantagem do barulho e consumo é largamente ultrapassado pela performance capada, baixa capacidade e o preço. Se for meter NAS com 10 gigabit e meter placas de rede então ai e um suicídio financeiro. A não que estejamos a falar de empresas com grande parque, renders e edição de vídeo 4K qual o proposito? Se a ideia é ter um "HD externo" com performance bruta é melhor algo com USB 3.1 (há caixas com RAID 0 de 2,5" a bater em 1 GB/S) ou thunderbolt.

Falam do ruído, mas do meu QNAP o que faz barulho é a fan. Para isso mais justifica um NAS passivo com discos de 2,5" 5400 rpm
 
Para isso mais justifica NAS com discos de 2,5" 5400 rpm

Que provavelmente vão precisar de uma fan mais barulhenta e/ou fazem mais barulho que os de 2.5".
Não é useless se o NAS tiver umas quantas placas de rede 10Gb.

Mas acho que preferia que apostassem em NAND mais barata de fabricar, mesmo que implique perda de performance. Se a diferença por GB não fosse muito grande, podia valer a pena ter SSDs para storage.
 
Discos de 2,5" são mais silenciosos e geram menos calor que 3,5", por isso porque um NAS com discos destes precisaria de uma fan "mais barulhenta"?

Eu tb gostaria que tivesse NAND mais "fraca", mas duradoura para SSD de storage. Não é preciso fazer 500 MB/s+++ nem ter 1 bilhão de IOPS... Isso quando acontecer que seria o golpe de misericódia nos mecânicos.
 
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